features applications image sensor ccd image sensor high-speed operation, back-thinned fft-ccd s9037/s9038 series s9037/s9038 series fft-ccd image sensors were developed for high-speed line scan cameras. since an on-chip amplifier having a w ide bandwidth is used to an image sensor, a pixel rate of 10 mhz can be obtained. s9037/s9038 series image sensors also deliver a h igh line scan rate equivalent to interline ccd sensors when used in line binning operation mode, because they have an active area pixel forma t where the number of vertical pixels is less than the number of horizontal pixels. this makes s9037/s9038 series ideal for line scan camer as. s9037/s9038 series image sensors have a pixel size of 24 24 m and are available in pixel formats of 512 4 pixels and 1024 4 pixels. s9038 series has a one-stage thermoelectric cooler assembled in the same package allowing stable operation at cooled temperatur es. both s9037/s9038 series image sensors use a quartz glass window equivalent to suprasil glass that provides high transmittance even a t 193 nm wavelength. these image sensors also have stable quantum efficiency in the uv region making them ideal for excimer laser monito rs. l high-speed operation: 10 mhz l pixel size: 24 24 m l line/pixel binning operation l s9038 series: one-stage thermoelectric cooling l high quantum efficiency: 90 % or more at peak l mpp operation l excimer laser monitors l high-speed line scan cameras 1 selection guide type no. cooling number of total pixels number of active pixels active area [mm (h) mm (v)] s9037-0902 520 6 512 4 12.288 0.096 s9037-1002 non-cooled 1044 8 1024 4 24.576 0.096 S9038-0902S 520 6 512 4 12.288 0.096 s9038-1002s one-stage te-cooled 1044 8 1024 4 24.576 0.096 specifications parameter s9037-0902 s9037-1002 S9038-0902S s9038-1002s line rate 16 khz 8 khz 16 khz 8 khz data rate 10 mhz vertical clock 2 phases horizontal clock 2 phases output circuit two-stage mosfet source follower package 24 pin metal package window material * 1 quartz window equivalent to suprasil ar-coated sapphire *1: window-less type is available as option.
ccd image sensor s9037/s9038 series 2 absolute maximum ratings (ta=25 c) parameter symbol min. typ. max. unit operating temperature topr -50 - +70 c storage temperature tstg -50 - +70 c od voltage v od -0.5 - +25 v rd voltage v rd -0.5 - +18 v ish voltage v ish -0.5 - +18 v igh voltage v ig1h , v ig2h -10 - +15 v sg voltage v sg -10 - +15 v og voltage v og -10 - +15 v rg voltage v rg -10 - +15 v tg voltage v tg -10 - +15 v vertical clock voltage v p1v , v p2v -10 - +15 v horizontal clock voltage v p1h , v p2h -10 - +15 v operating conditions (mpp mode, ta=25 c) parameter symbol min. typ. max. unit output transistor drain voltage v od 12 15 - v reset drain voltage v rd 11.5 12 12.5 v output gate voltage v og 135v substrate voltage v ss - 0 - v test point (horizontal input source) v ish -v rd -v test point (horizontal input gate) v ig1h , v ig2h -8 0 - v high v p1vh , v p2vh 468 vertical shift register clock voltage low v p1vl , v p2vl -9 -8 -7 v high v p1hh , v p2hh 4 6 8 horizontal shift register clock voltage low v p1hl , v p2hl -9 -8 -7 v high v sgh 468 summing gate voltage low v sgl -9 -8 -7 v high v rgh 4 6 8 reset gate voltage low v rgl -9 -8 -7 v high v tgh 468 transfer gate voltage low v tgl -9 -8 -7 v electrical characteristics (ta=25 c) parameter symbol remark min. typ. max. unit signal output frequency fc - - - 10 mhz reset clock frequency frg - - - 10 mhz -0902 - - 300 - pf vertical shift register capacitance -1002 c p1v , c p2v - - 500 - pf -0902 - - 200 - pf horizontal shift register capacitance -1002 c p1h , c p2h - - 300 - pf summing gate capacitance c sg --7-pf reset gate capacitance c rg - - 7 - pf transfer gate capacitance c tg --15-pf transfer efficiency cte * 2 - 0.99995 - - dc output level vout - - 7 - v output impedance zo * 3 - 500 - ? power dissipation p * 3, * 4 - 100 - mw *2: charge transfer efficiency per pixel, measured at half of the full well capacity. *3: this depends on the output transistor drain voltage. *4: power dissipation of the on-chip amplifier.
ccd image sensor s9037/s9038 series -50 -40 -30 -20 0 -10 10 20 30 temperature (?c) 0.1 1 10 100 1000 10000 dark current (e - /pixel/s) (typ.) 0 10 100 200 wavelength (nm) transmittance (%) 300 400 500 600 700 800 900 1000 1100 1200 20 30 40 50 60 70 80 90 100 (typ. ta=25 ? c) quartz window ar coated sapphire electrical and optical characteristics (ta=25 c, unless otherwise noted) parameter symbol min. typ. max. unit saturation output voltage vsat fw sv v vertical - 300 - full well capacity horizontal (summing) fw - 600 - ke - ccd node sensitivity sv - 1.2 - v/e - 25 c - 4,000 - dark current * 5 (mpp mode) 0 c ds - 200 - e - /pixel/s readout noise * 6 nr - 100 - e - rms dynamic range (line binning) dr - 6000 - - photo response non-uniformity * 7 prnu - - 10 % spectral response range (without window) - 200 to 1100 - nm *5: dark current nearly doubles for every 5 to 7 c increase in temperature. *6: -40 c, operating frequency is 80 khz. *7: condition: half of saturation output voltage. quantum efficiency (%) wavelength (nm) (typ. ta=25 ? c) 0 200 400 600 800 1000 1200 10 20 30 40 50 60 70 80 90 100 front-illuminated front-illuminated (uv coat) back-thinned spectral response (without window) * 8 spectral response of photosensitive surface (without cap) kmpdb0150ea kmpdb0058ea dark current vs. temperature kmpdb0037eb 3 wavelength (nm) (typ. ta=25 ? c) quantum efficiency (%) 120 100 0 20 40 120 100 80 60 140 160 180 200 spectral transmittance characteristics kmpdb0110ea *8: spectral response with quartz glass or ar-coated sapphire are decreased by the transmittance.
ccd image sensor s9037/s9038 series device structure s9037-0902, S9038-0902S 1 thinning thinning ss rg rd od os og 4 blank sg p2h p1h 4 blank 512 active 2 bevel ig2h ig1h ish tg p2v p1v 4 active 6 kmpdc0159ec s9037-1002, s9038-1002s 1 thinning thinning ss rd od os og 4 blank sg p2h p1h 6 bevel 6 bevel 4 blank 1024 active 3 bevel 1 bevel 4 active ig2h ig1h p2v p1v 8 rg ish tg kmpdc0160eb 4
ccd image sensor s9037/s9038 series kmpdc0161e timing chart (line binning) parameter symbol min. typ. max. unit pulse width tpwv 1 - - s p1v, p2v, tg rise and fall time tprv, tpfv - 20 - ns pulse width tpwh 50 - - ns rise and fall time tprh, tpfh - 10 - ns p1h, p2h duty ratio - - 50 - % pulse width tpws 50 - - ns rise and fall time tprs, tpfs - 10 - ns sg duty ratio - - 50 - % pulse width tpwr - 15 - ns rg rise and fall time tprr, tpfr 5 - - ns tg (p2v) - p1h overlap time tovr 3 - - s tpwv tpwh, tpws p1v p2v, tg p1h p2h sg rg vos tpwr vertical binning period integration period integration period readout period 5
ccd image sensor s9037/s9038 series window 16.3 8.2 34.0 2.54 22.9 22.4 0.096 active area 12.29 4.4 4.8 2.4 3.8 photosensitive surface index mark pin no. 1 3.0 (24 ) 0.5 window 28.6 22.9 22.4 active area 24.58 0.096 8.2 44.0 2.54 3.0 photosensitive surface 4.4 2.4 4.8 3.8 index mark pin no. 1 (24 ) 0.5 window 16.3 8.2 34.0 50.0 2.54 22.9 19.0 4.0 42.0 22.4 0.096 7.3 1.0 7.7 6.7 4.8 active area 12.29 photosensitive surface index mark pin no. 1 3.0 te-cooler (24 ) 0.5 kmpda0156ea kmpda0155ea dimensional outlines (unit: mm) kmpda0153eb kmpda0154ea (24 ) 0.5 7.3 1.0 3.0 6.7 4.8 photosensitive surface 7.7 index mark pin no. 1 0.096 4.0 19.0 22.4 22.9 44.0 52.0 60.0 2.54 window 28.6 active area 24.58 8.2 te-cooler s9037-1002 S9038-0902S s9038-1002s s9037-0902 6
ccd image sensor s9037/s9038 series 7 window 16.3 4.5 34.0 2.54 22.9 22.4 0.096 active area 12.29 4.8 2.4 photosensitive surface index mark pin no. 1 3.0 (24 ) 0.5 window 28.6 22.9 22.4 active area 24.58 0.096 4.5 44.0 2.54 3.0 photosensitive surface 2.4 4.8 index mark pin no. 1 (24 ) 0.5 window 16.3 4.5 34.0 50.0 2.54 22.9 19.0 4.0 42.0 22.4 0.096 1.0 7.7 4.8 active area 12.29 photosensitive surface index mark pin no. 1 3.0 te-cooler (24 ) 0.5 kmpda0168ea kmpda0167ea dimensional outlines of windowless types (unit: mm) kmpda0165ea kmpda0166ea (24 ) 0.5 1.0 3.0 4.8 photosensitive surface 7.7 index mark pin no. 1 0.096 4.0 19.0 22.4 22.9 44.0 52.0 60.0 2.54 window 28.6 active area 24.58 4.5 te-cooler s9037-1002n s9038-0902n s9038-1002n s9037-0902n pin connections s9037 series s9038 series pin no. sym bol description remark sym bol description remark 1 rd reset drain +12 v rd reset drain +12 v 2 os output transistor source external r 2 =2.2 k ? os output transistor source external r l =2.2 k ? 3od output transistor drain +15 v od output transistor drain +15 v 4 og output gate +3 v og output gate +3 v 5 sg summ ing gate same timing as p2h sg summ ing gate same timing as p2h 6 - - 7- - 8 p2h ccd horizontal register clock-2 p2h ccd horizontal register clock-2 9p1h ccd horizontal register clock-1 p1h ccd horizontal register clock-1 10 ig 2h test point (horizontal input gate-2) gnd ig 2h test point (horizontal input gate-2) gnd 11 ig 1h test point (horizontal input gate-1) gnd ig1h test point (horizontal input gate-1) gnd 12 ish test point (horizontal input source) shorted to rd ish test point (horizontal input source) shorted to rd 13 tg transfer gate same timing as p2v tg transfer gate same timing as p2v 14 p2v ccd vertical register clock-2 p2v ccd vertical register clock-2 15 p1v ccd vertical register clock-1 p1v ccd vertical register clock-1 16 nc th1 therm istor 17 nc th2 therm istor 18 nc p- te-cooler- 19 nc p+ te-cooler+ 20 ss substrate (gnd) gnd ss substrate (gnd) 21 nc nc 22 nc nc 23 nc nc 24 rg reset gate rg reset gate
ccd image sensor s9037/s9038 series specifications of built-in te-cooler (typ.) parameter symbol condition s9038-0902 s9038-1002 unit internal resistance rint ta=25 c2.5 1.2 ? maximum current * 8 imax tc * 9 =th * 10 =25 c 1.5 3.0 a maximum voltage vmax tc * 9 =th * 10 =25 c3.8 3.6v maximum heat absorption * 11 qmax 3.4 5.1 w maximum temperature of heat radiating side -7070 c *8: maximum current imax: if the current greater than this value flows into the thermoelectric cooler, the heat absorption begins to decrease due to the joule heat. it should be noted that this value is not the damage threshold value. to protect the thermoelectric cooler and maintain stable operation, the supply current should be less than 60 % of this maximum current. *9: temperature of the cooling side of thermoelectric cooler. *10: temperature of the heat radiating side of thermoelectric cooler. *11: maximum heat absorption qmax. this is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the maximum current is supplied to the unit. 0 1 2 3 voltage (v) ccd temperature ( ? c) 4 7 6 5 -40 -30 4 3 2 current (a) 1 0 -20 -10 0 10 20 30 (typ. ta=25 ? c) voltage vs. current ccd temperature vs. current 0 1 2 3 voltage (v) ccd temperature ( ? c) 4 7 6 5 -40 -30 2.0 1.5 1.0 current (a) 0.5 0 -20 -10 0 10 20 30 (typ. ta=25 ? c) voltage vs. current ccd temperature vs. current kmpdb0178ea kmpdb0179ea S9038-0902S s9038-1002s specifications of built-in temperature sensor a chip thermistor is built in the same package with a ccd chip, and the ccd chip temperature can be monitored with it. a relati on between the thermistor resistance and absolute temperature is expressed by the following equation. r1 = r2 expb (1 / t1 - 1 / t2) where r1 is the resistance at absolute temperature t1 (k) r2 is the resistance at absolute temperature t2 (k) b is so-called the b constant (k) the characteristics of the thermistor used are as follows. r (298k) = 10 k ? b (298k / 323k) = 3450 k kmpdb0111ea (typ. ta=25 ? c) 10 k ? 220 240 260 temperature (k) resistance 280 300 100 k ? 1 m ? 8
hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamats u.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?200 7 hamamatsu photonics k.k. cat. no. kmpd1067e04 oct. 2007 dn ccd image sensor s9037/s9038 series precaution for use (electrostatic countermeasures) handle these sensors with bare hands or wearing cotton gloves. in addition, wear anti-static clothing and use a wrist band wit h an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to dis- charge. ground the tools used to handle these sensors, such as tweezers and soldering irons. it is not always necessary to provide all the electrostatic measures stated above. implement these measures according to the amount of damage that occurs. element cooling/heating temperature incline rate element cooling/heating temperature incline rate should be set at less than 5 k/min. 9
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